7/16 Din iungo specialiter disposito velit basi stationes in mobili communicationis (GSM, cdma, 3G, 4g) systems, featuring alta potestate, perfectum IMPERATIO EPITATIO et applicabiles variis ambitibus. Facile est install et praebet reliable iunctio.
Telsto 7/16 Din iungo sunt available in masculum aut feminam genera cum L ohm impedirentance. Nostrum 7/16 Din iungo sunt available in recta vel recti angulo versions, tum, IV foraminis LABIUM, bulkhead, IV foraminis panel vel mons minus options. Haec 7/16 Din iungo Cogitationes praesto sunt in Fibulae, Crimp vel Solder affectus modi.
● humilis imd et humilis vswr praebet melius systematis perficientur.
● auto-flaring consilium ensures otium of installation cum vexillum manus instrumentum.
● pres-convenerunt gasket protegit in pulveris (P67) et aqua (IP67).
● phosphor aes / AG Plated contactus et aes / tri- ally plated corpora libera a altus conductivity et corrosio resistentia.
● Wireless Infrastructure
● basi statio
● Fulgur Donec
● Satellite Communications
● Antennae Systems
Interface | ||||
Secundum | IEC60169-4 | |||
Electrica | ||||
Proprium impedimentum | 50ohm | |||
1 | Frequentiam range | DC, 3GHz | ||
2 | Vswr | ≤1.15 | ||
3 | Dielectric obstante voltage | ≥2700v RMS, 50Hz, in mare gradu | ||
4 | Dielectric resistentia | ≥10000mω | ||
6 | Contact resistentia | Exterius contactus; Center Contact≤0.4MΩ | ||
7 | Insertionem damnum (DB) | Minus quam 0.15 | ||
8 | Pim3 | ≤, 155dbc | ||
Mechanica | ||||
1 | Diuturnitas | CURATIO CYCLES ≥500 | ||
Materia et plating | ||||
Descriptio | Materia | Plating / ni | ||
1 | Corpus | Aes | Tri-mixy | |
2 | Insulator | Ptfe | - | |
3 | Centrum conductor | Qsn6.5-v.1 | AG | |
4 | Alius | Aes | Ni | |
Environmental | ||||
1 | Temperature range | -40 ℃ + LXXXV ℃ | ||
2 | IMPERVIUS | Ip67 |
Support:
* High vexillum qualis
* Most competitive pretium
* Optimus tailored Telecom Solutions
* Professional, reliable et flexibile Services
* Fortis commercial facultatem solvendo problems
* Staff Staff ut manibus omnes vestra propter necessitates
Model:Tel, Dinf.12s, RFC
Descriptio
Laudate feminam Iungo ad 1/2 "Super flexibile funem
Materia et plating | |
Center Contact | Aes / argentum plating |
Insulator | Ptfe |
Corpus & exterius Conductor | Aeris / Alloy Plated cum Tri-Alloy |
Gasket | Silicon Purgamentum |
Electrica characteres | |
Propria impedimentis | L ohm |
Frequentiam range | DC ~ III GHz |
Nulla resistitur | ≥5000mω |
Dielectric fortitudinem | MMD V RMS |
Center contact resistentia | ≤0.4 mΩ |
Exterius contactum resistentia | ≤0.2 mΩ |
Insertionem damnum | ≤0.15db@3ghz |
Vswr | ≤1.08@-3.0ghz |
Temperature range | -40 ~ LXXXV ℃ |
Pim DBC (II × 20W) | ≤-CLX DBC (II × 20W) |
IMPERVIUS | Ip67 |
Installation instructiones de n vel VII / XVI aut (IV) CCCX I / II "Super flexibile funem
Structure of Connector: (Fig1)
A. Frax
B. Back Nut
C. Gasket
Expolia dimensiones est ostensum est a tabula (Fig2), operam debet solvit dum exuuntur:
I. De fine superficies interioris Conductor sit Chamfied.
II. Remove impudicitiis ut aere scale et burr in fine superficiem in funem.
Assembling signa pars: screw ad signantes partem in una cum a diagram conductor in funem, ut ostensum est per diagram (Fig3).
Conclusio ad tergum nut (Fig3).
Miscere in fronte et retro nucis abhoning sicut ostensum est per diagram (figs (V)
I. Antequam, linunt iacuit Lubricating uncto in O-anulum.
II. Custodi dorso nut et funem immobilis, cochlea in principalis testa corpus retractum corpus. Screw et principalis testa corpus retrorsum corpus per simia clavis. Consummatum est.